Journal article
Performance Upper Limit of sub-10 nm Monolayer MoS2
Transistors
- Ni, Zeyuan Department of Materials Engineering; The University of Tokyo; Tokyo 113-8656 Japan
- Ye, Meng State Key Laboratory for Mesoscopic Physics and Department of Physics; Peking University; Beijing 100871 P. R. China
- Ma, Jianhua School of Physics and Nuclear Energy Engineering; Beihang University; Beijing 100191 P. R. China
- Wang, Yangyang Department of Nuclear Science and Engineering and Department of Materials Science and Engineering; Massachusetts Institute of Technology; Cambridge MA 02139 USA
- Quhe, Ruge Facoltà di Informatica; Istituto di Scienze Computazionali; Università della Svizzera Italiana; 6900 Lugano Switzerland
- Zheng, Jiaxin School of Advanced Materials; Peking University; Shenzhen Graduate School; Shenzhen 518055 P. R. China
- Dai, Lun Collaborative Innovation Center of Quantum Matter; Beijing 100871 P. R. China
- Yu, Dapeng Collaborative Innovation Center of Quantum Matter; Beijing 100871 P. R. China
- Shi, Junjie State Key Laboratory for Mesoscopic Physics and Department of Physics; Peking University; Beijing 100871 P. R. China
- Yang, Jinbo Collaborative Innovation Center of Quantum Matter; Beijing 100871 P. R. China
- Watanabe, Satoshi Department of Materials Engineering; The University of Tokyo; Tokyo 113-8656 Japan
- Lu, Jing Collaborative Innovation Center of Quantum Matter; Beijing 100871 P. R. China
- 2016-8-2
Published in:
- Advanced Electronic Materials. - Wiley. - 2016, vol. 2, no. 9, p. 1600191
- Language
-
- English
- Open access status
- closed
- Identifiers
-
- DOI 10.1002/aelm.201600191
- ISSN 2199-160X
- Persistent URL
- https://fredi.hepvs.ch/global/documents/274029
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